BTS307 查看數據表（PDF） - Siemens AG
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BTS307 Datasheet PDF : 13 Pages
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BTS 307
Options Overview
all versions: High-side switch, Input protection, ESD protectionand reverse battery
protection with 150 Ω in GND connection, protection against loss of ground
Type
BTS 410D2 410E2 410G2 410H2 307 308
Logic version
D
E
G
H
Overtemperature protection with hysteresis
Tj >150 °C, latch function9)10)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
X
X
X
X
X
X
switches off when VON>3.5 V typ. and Vbb> 8 V
typ9) (when first turned on after approx. 150 µs)
X
X
switches off when VON>8.5 V typ.9)
(when first turned on after approx. 150 µs)
X
X
Achieved through overtemperature protection
X
X
Open load detection
in OFF-state with sensing current 6 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
Undervoltage shutdown with auto restart X X X X X X
Overvoltage shutdown with auto restart
X
X
X
X
-
X
Status feedback for
overtemperature
X
X
X
X
X
X
short circuit to GND
X
X
-
X
X
X
short to Vbb
-11) -11) -11)
X
X
X
open load
X
X
X
X
X
X
undervoltage
X
-
-
-
X
-
overvoltage
X
-
-
-
-
-
Status output type
CMOS
X
Open drain
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
X
X
low level (better protection of application)
X
X
X
X
Protection against loss of GND
X
X
X
X
X
X
9) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
10) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
11) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Semiconductor Group
9
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