BTS432D2E3043 查看數據表（PDF） - Siemens AG
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BTS432D2E3043 Datasheet PDF : 13 Pages
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Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
( max 400 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C:
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Integrated resistor in Vbb line
IL(SCp)
IL(SCr)
td(SC)
VON(CL)
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-Vbb
Rbb
BTS 432 D2
Values
Unit
min typ max
--
-- 74 A
-- 44
--
24
--
--
22 35
-- A
80
-- 400 µs
-- 58
-- V
-- 8.3
-- V
150
--
-- °C
-- 10
-- K
--
-- 1.7 J
1.3
1.0
--
-- 32 V
-- 120
-- Ω
Diagnostic Characteristics
Open load detection current
(on-condition)
Tj=-40 °C: IL (OL)
Tj=25..150°C:
2
-- 900 mA
2
-- 750
8) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2L * (VOVN(OCNL()C-LV) bb ), see diagram page 8
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group
4
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