Q67060-S6953A3 查看數據表（PDF） - Infineon Technologies

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Q67060-S6953A3

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS555

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Symbol

Protection Functions16)

Short circuit current limit (Tab to pins 1,5)17)

VON = 12 V, time until shutdown max. 300 µs Tc =-40°C:

Tc =25°C:

Tc =+150°C:

Short circuit shutdown delay after input current

positive slope, VON > VON(SC)

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp 18)

(inductive load switch off)

IL= 40 mA:

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) (e.g. overvoltage)

IL= 40 mA

Short circuit shutdown detection voltage

(pin 3 to pins 1,5)

Thermal overload trip temperature

Thermal hysteresis

IL(SCp)

td(SC)

-VOUT(CL)

VON(CL)

VON(SC)

Tjt

∆Tjt

Reverse Battery

Reverse battery voltage 19)

On-state resistance (Pins 1,5 to pin 3)

Tj = 25 °C:

Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 kΩ Tj = 150 °C:

Integrated resistor in Vbb line

Tj = 25 °C:

Tj = 150 °C:

-Vbb

RON(rev) 1)

Rbb

Values

Unit

min typ max

200 320 550 A

200 400 620

300 480 650

80

-- 300 µs

14 17 20 V

40 44 47 V

--

6

150

--

-- 10

-- V

-- °C

-- K

--

-- 16 V

-- 2.3 3.0 mΩ

3.9 4.7

90 110 135 Ω

105 125 150

16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by

permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.

18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode

is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! Increasing

reverse battery voltage capability is simply possible as described on page 9.

Infineon Technologies AG

5

2003-Oct-01

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