BU1506DX 查看數據表（PDF） - SavantIC Semiconductor

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BU1506DX

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU1506DX

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=600mA ;IC=0

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.79A

VBEsat

ICES

IEBO

Base-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

IC=3A; IB=0.79A

VCE=rated;VBE=0

Tj=125

VEB=7.5V; IC=0

hFE-1

DC current gain

IC=0.3A ; VCE=5V

hFE-2

DC current gain

IC=3.0A ; VCE=5V

VF

Diode forward voltage

IF=3.0A

CC

Collector output capacitance

IE=0,f=1MHz;VCB=10V

MIN TYP. MAX UNIT

7.5 13.5

V

700

V

5.0

V

1.1

V

1.0

2.0

mA

90

180 mA

12

3.8 5.5 7.5

1.6 2.0

V

47

pF

2

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