BU2725AW 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

BU2725AW

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU2725AW

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH

825

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

7.5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 1.75A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 7A; IB=B 1.75A

VCE= 1700V ; VBE= 0

VCE= 1700V ; VBE= 0; TC=125℃

VEB= 7.5V ; IC= 0

1.0

V

1.1

V

1.0

2.0

mA

1.0 mA

hFE-1

DC Current Gain

IC= 0.1A ; VCE= 5V

22

hFE-2

DC Current Gain

IC= 7A ; VCE= 1V

4

8.5

isc Website：www.iscsemi.cn

2

Share Link: