BU931G-TQ2-T 查看數據表（PDF） - Unisonic Technologies
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BU931G-TQ2-T Datasheet PDF : 5 Pages
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BU931
TYPICAL CHARACTERISTICS
Collector Emitter Saturation Voltage
vs. Collector Current
hFE=50
3
2
125°C
25°C
-40°C
1
01
2
46
Collector Current, IC (A)
Base Emitter Saturation Voltage vs.
Collector Current
hFE=50
3
125°C
25°C
2
-40°C
1
0
1
2
4
6
Collector Current, IC (A)
DC Current Gain vs. Collector Current
8 VCE=2V
6
4
2
25°C
102
8
6
4
2
10
10-1
2
4 68
2
4 68
1
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector Emitter Saturation Voltage
vs. Collector Current
hFE=100
3
2
125°C
25°C
-40°C
1
0
1
2
4
6
Collector Current, IC (A)
Base Emitter Saturation Voltage vs.
Collector Current
hFE=100
3
125°C
25°C
2
-40°C
1
0
1
2
4
6
Collector Current, IC (A)
4 of 5
QW-R214-012,E
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