BUK108-50DL 查看數據表（PDF） - NXP Semiconductors.
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BUK108-50DL Datasheet PDF : 10 Pages
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK108-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
Continuous drain source voltage1
-
VIS
Continuous input voltage
-
ID
Continuous drain current
Tmb ≤ 25 ˚C; VIS = 5 V
ID
Continuous drain current
Tmb ≤ 100 ˚C; VIS = 5 V
IDRM
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V
PD
Total power dissipation
Tmb ≤ 25 ˚C
Tstg
Storage temperature
-
Tj
Continuous junction temperature2
normal operation
Tsold
Lead temperature
during soldering
MIN.
-
0
-
-
-
-
-55
-
-
MAX.
50
6
13.5
8.5
54
40
150
150
250
UNIT
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VISP
Protection supply voltage3
Over temperature protection
for valid protection
4
-
V
VDDP(T)
VDDP(P)
PDSM
Protected drain source supply voltage
Short circuit load protection4
Protected drain source supply
voltage5
Instantaneous overload dissipation
VIS = 5 V
VIS = 5 V
Tmb = 25 ˚C
-
50
V
-
24
V
-
0.6
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
IDROM
EDSM
EDRM
Repetitive peak clamping current
Non-repetitive clamping energy
Repetitive clamping energy
VIS = 0 V
Tmb ≤ 25 ˚C; IDM = 15 A;
VDD ≤ 20 V; inductive load
Tmb ≤ 95 ˚C; IDM = 8 A;
VDD ≤ 20 V; f = 250 Hz
-
15
A
-
200
mJ
-
20
mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
PDSM, which is always the case when VDS is less than VDDP(P) maximum.
June 1996
2
Rev 1.000
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