1·0
60%
40%
20%
10%
0·1
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX25DZA
BULD25D
TA = 25°C
0·01
0%
0·001
10-4
10-3
t1
duty cycle = t1/t2
Read time at end of t1,
t2
TJ (max)
–
TA
=
PD (peak)
•
RZθθJJAA
•
RθJA (max)
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
1·0
60%
40%
20%
10%
0·1
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX25SZA
BULD25SL
TA = 25°C
0·01
0%
0·001
10-4
10-3
t1
duty cycle = t1/t2
Read time at end of t1,
t2
TJ (max)
–
TA
=
PD (peak)
•
RZθθJJAA
•
RθJA (max)
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 9.
PRODUCT INFORMATION
5