BUP602D 查看數據表（PDF） - Siemens AG

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BUP602D

IGBT With Antiparallel Diode

Siemens AG 

BUP 602D

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 25 °C

40

Typ. output characteristics

IC = f (VCE)

parameter: tp = 80 µs, Tj = 125 °C

40

A

17V

15V

IC

13V

30

11V

9V

7V

25

A

17V

15V

IC

13V

30

11V

9V

7V

25

20

20

15

15

10

10

5

0

0

1

2

3

V

5

VCE

5

0

0

1

2

3

V

5

VCE

Typ. transfer characteristics

IC = f (VGE)

parameter: tp = 80 µs, VCE = 20 V

40

A

IC

30

25

20

15

10

5

0

0

2

4

6

8 10 V 14

VGE

Semiconductor Group

5

Jul-31-1996

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