BUW13 查看數據表（PDF） - Comset Semiconductors
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BUW13 Datasheet PDF : 3 Pages
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NPN BUW13 - BUW13A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
ICES
Collector Cutoff
Current
IEBO
VCE(SAT)
VBE(SAT)
Emitter Cutoff
Current
Collector-Emitter
saturation Voltage
Base-Emitter
saturation Voltage
hFE
DC Current Gain
SWITCHING TIMES
Test Condition(s)
IC= 100 mA , IB= 0 A BUW13
L= 25 mH
BUW13A
VCE= VCEMax
VBE= 0 V
BUW13
BUW13A
VCE= VCEMax, VBE= 0 V BUW13
Tcase = 125°C
BUW13A
VEB= 9 V, IC= 0 A
BUW13
BUW13A
IC= 10 A , IB= 2 A
IC= 8 A , IB= 1.6 A
BUW13
BUW13A
IC= 10 A , IB= 2 A
BUW13
IC= 8 A , IB= 1.6 A
BUW13A
IC=20 mA , VCE=5 V
BUW13
BUW13A
IC=1.5 A , VCE=5 V
BUW13
BUW13A
Min Typ Mx Unit
400 -
450 -
-
-
-
-
-
-
V
1
mA
4
-
- 10 mA
-
- 1.5
V
-
- 1.6
10 - 35
-
10 - 35
Symbol
Ratings
ton
Turn-on time
ts
Storage time
tf
File time
Test Condition(s)
For BUW13
IC= 10 A , IB1 = -IB2 = 2 A
For BUW13A
IC= 8 A , IB1 = -IB2 = 1.6 A
Min Typ Mx Unit
- 1.2 1.5
- 0.6 1.1 µs
- 0.17 0.25
29/09/2012
COMSET SEMICONDUCTORS
2/3
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