BUX80 查看數據表（PDF） - Comset Semiconductors
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BUX80 Datasheet PDF : 2 Pages
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NPN BUX80
HIGH CURRENT, HIGH SPEED, HIGH POWER
TRANSISTOR
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCER
VEBO
VCES
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector- Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
RBE = 50Ω
IC = 0
VBE = 0
tp = 10ms
@ TC = 40°
Value
400
500
10
800
10
15
5
100
150
-65 to +150
Unit
V
V
V
V
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
Value
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VCER
IEBO
ICES
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Emitter Cutoff Current
Collector Cutoff Current
Test Condition(s)
IC=100 mA
IC=100 mA , RBE = 50Ω
VCE=10 V , IC=0
VCE= VCES , VBE= 0
VCE= VCES , VBE= 0, Tcase = 125°C
COMSET SEMICONDUCTORS
Min Typ Mx Unit
400 - -
V
500 -
--
--
--
-
V
10 mA
1
3
mA
1/2
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