BUY69C 查看數據表（PDF） - Inchange Semiconductor
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BUY69C Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUY69A BUY69B BUY69C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUY69A
BUY69B IC=100mA ; IB=0
BUY69C
BUY69A
VCBO
Collector-base voltage BUY69B IC=1mA; IE=0
BUY69C
VCEsat Collector-emitter saturation voltage IC=8A ;IB=2.5A
VBEsat Base-emitter saturation voltage
IC=8A ;IB=2.5A
ICES
Collector cut-off current
VCE=rated VCES; VBE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=8V; IC=0
IC=2.5A ; VCE=10V
IC=0.5A ; VCE=10V;f=1MHz
Switching times
tr
Rise time
ts
Storage time
IC=5A ;IB1=-IB2=1.0A; VCC=250V
tf
Fall time
MIN TYP. MAX UNIT
400
325
V
200
1000
800
V
500
3.3
V
2.2
V
1.0 mA
1.0 mA
15
10
MHz
0.3 μs
1.8 μs
1.0 μs
2
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