EGL41F(2007) 查看數據表（PDF） - Vishay Semiconductors
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EGL41F Datasheet PDF : 4 Pages
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BYM12-50 thru BYM12-400, EGL41A thru EGL41G
Vishay General Semiconductor
50
Pulse Width = 300 µs
1 % Duty Cycle
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.2
EGL41A - EGL41D
EGL41F - EGL41G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
TJ = 150 °C
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
70
TJ = 25 °C
60
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
EGL41A - EGL41D
EGL41F - EGL41G
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-213AB (GL41)
Solderable Ends
1st Band
D2
=
D1
+
-
0
0.008
(0.20)
D2
D1 =
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.022 (0.56)
0.018 (0.46)
1st Band Denotes Type and Positive End (Cathode)
0.049 (1.25)
MIN.
Mounting Pad Layout
0.138 (3.5)
MAX.
0.118 (3.0)
MIN.
0.238 (6.0)
REF.
Document Number: 88581 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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