BYV32E-100 查看數據表（PDF） - NXP Semiconductors.
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BYV32E-100 Datasheet PDF : 9 Pages
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NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from with heatsink compound; both diodes
junction to mounting conducting
base
with heatsink compound; per diode; see
Figure 3
thermal resistance from
junction to ambient
Min Typ Max Unit
-
-
1.6 K/W
-
-
2.4 K/W
-
60
-
K/W
10
Zth(j-mb)
(K/W)
1
003aac980
10−1
P
δ = tp
T
Fig 3.
10−2
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
t
1 10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
trr
reverse recovery time
VFR
forward recovery
voltage
Conditions
IF = 8 A; Tj = 150 °C; see Figure 4
IF = 20 A; Tj = 25 °C
VR = 100 V; Tj = 100 °C
VR = 100 V; Tj = 25 °C
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
IF = 0.5 A; IR = 1 A; measured at reverse
current = 0.25 A; step recovery; Tj = 25 °C;
see Figure 6
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see
Figure 7
Min Typ Max Unit
-
0.72 0.85 V
-
1
1.15 V
-
0.2 0.6 mA
-
6
30
µA
-
8
12.5 nC
-
20
25
ns
-
10
20
ns
-
-
1
V
BYV32E-100_4
Product data sheet
Rev. 04 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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