NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
32
IF
(A)
24
16
003aac981
(1) (2)
(3)
8
0
0
0.4
0.8
1.2
1.6
VF (V)
IF
dlF
dt
trr
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
IF
IF
IF
trr
time
0.25 x IR
Qr
IR
IR
003aac563
Fig 6. Reverse recovery definitions; step recovery
VF
Fig 7. Forward recovery definitions
time
VFRM
VF
time
001aab912
BYV32E-100_4
Product data sheet
Rev. 04 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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