DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BYW98-200 查看數據表(PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

零件编号
产品描述 (功能)
生产厂家
BYW98-200
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd LUGUANG
BYW98-200 Datasheet PDF : 4 Pages
1 2 3 4
THERMAL RESISTANCE
Symbol
Rth (j-a) Junction-ambient *
* On infinite heatsink with 10mm lead length.
Parameter
BYW98-200
High Efficiency Fast Recovery Rectifier Diodes
Value
25
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR *
VF **
Reverse leakage
current
Tj = 25°C
Tj = 100°C
Forward voltage drop Tj = 25°C
VR = VRRM
IF = 9A
Tj = 100°C
IF = 3A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equations:
P = 0.75 x IF(AV) + 0.04 IF2(RMS)
Min. Typ. Max. Unit
10 µA
0.5 mA
1.2 V
0.78 0.85
RECOVERY CHARACTERISTICS
Symbol
trr
Qrr
tfr
VFP
Test Conditions
Tj = 25°C
VR = 30V
IF = 1A
dIF/dt = - 50A/µs
Tj = 25°C
VR 30V
IF = 3A
dIF/dt = - 20A/µs
Tj = 25°C
IF = 3A
Measured at 1.1 x VF max
dIF/dt = - 50A/µs
Tj = 25°C
IF = 3A
dIF/dt = - 50A/µs
Min. Typ. Max. Unit
35 ns
15
nC
20
ns
5
V
http://www.luguang.cn
mail:lge@luguang.cn

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]