BZA100 查看數據表（PDF） - NXP Semiconductors.
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BZA100 Datasheet PDF : 8 Pages
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NXP Semiconductors
18-fold ESD transient voltage suppressor
Product data sheet
BZA100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
Rth j-a
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
VALUE
56.5
100
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VZ
VF
VZSM
IR
rdif
SZ
Cd
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of
working voltage
diode capacitance
IZ = 5 mA
IF = 200 mA
tp = 1 ms; IZSM = 2.5 A
VR = 5.25 V
IZ = 1 mA
IZ = 5 mA
IZ = 5mA
see Fig.5
VR = 0; f = 1 MHz
VR = 5.25 V; f = 1 MHz
MIN.
6.4
−
−
−
−
−
−
−
−
TYP.
6.8
−
−
−
−
−
3
−
−
MAX.
7.2
1.3
11
2
40
8
−
120
60
UNIT
V
V
V
µA
Ω
Ω
mV/K
pF
pF
1997 Dec 02
3
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