BZA408B 查看數據表（PDF） - NXP Semiconductors.

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BZA408B

Quadruple bidirectional ESD transient voltage suppressor

NXP Semiconductors. 

NXP Semiconductors

Quadruple bidirectional ESD transient

voltage suppressor

Product data sheet

BZA408B

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point one or more diodes loaded

VALUE

340

UNIT

K/W

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode (pin 2 and / or 5 connected to ground)

VRWM

VR

VZSM

IR

Cd

αch (p to p)

working reverse voltage

reverse voltage

non-repetitive peak reverse voltage

reverse current

diode capacitance

pin to pin channel separation

Itest = 5 mA

tp = 1 ms; IZSM = 2 A

VR = VRWM

see Fig.3

VR = 0; f = 1 MHz

VR = 5 V; f = 1 MHz

note 1; see Fig.4

−

5

V

5.5

−

V

−

10

V

−

100

nA

−

75

pF

−

55

pF

70

−

dB

Note

1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of

1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input

impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz

signal the same measurement is done in the opposite way.

1998 Oct 15

3

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