BZA820A 查看數據表（PDF） - NXP Semiconductors.

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BZA820A

Quadruple ESD transient voltage suppressor

NXP Semiconductors. 

NXP Semiconductors

Quadruple ESD transient voltage

suppressor

Product data sheet

BZA800A-series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

IZ

IF

IFSM

Ptot

PZSM

Tstg

Tj

working current

Tamb = 25 °C

continuous forward current

Tamb = 25 °C

non-repetitive peak forward current tp = 1 ms; square pulse

total power dissipation

Tamb = 25 °C

non repetitive peak reverse power square pulse; tp = 1 ms; see Fig.3

dissipation:

BZA856A, BZA862A, BZA868A,

BZA820A

storage temperature

junction temperature

Note

1. DC working current limited by Ptot(max).

MIN. MAX. UNIT

−

note 1 mA

−

200

mA

−

3.75 A

−

335

mW

−

24

W

−

17

W

−65

+150 °C

−

150

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

CONDITIONS

all diodes loaded

VALUE

370

UNIT

K/W

2000 Sep 25

3

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