BZA820A 查看數據表（PDF） - NXP Semiconductors.
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BZA820A Datasheet PDF : 11 Pages
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NXP Semiconductors
Quadruple ESD transient voltage
suppressor
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 200 mA
IR
reverse current
BZA856A
BZA862A
BZA868A
BZA820A
VZ
working voltage
VR = 3 V
VR = 4 V
VR = 4.3 V
VR = 15 V
IZ = 1 mA
BZA856A
BZA862A
BZA868A
BZA820A
rdiff
differential resistance
BZA856A
IZ = 1 mA
BZA862A
BZA868A
BZA820A
SZ
temperature coefficient
BZA856A
IZ = 1 mA
BZA862A
BZA868A
BZA820A
Cd
diode capacitance
BZA856A
f = 1 MHz; VR = 0
BZA862A
BZA868A
BZA820A
IZSM
non-repetitive peak reverse current tp = 1 ms; Tamb = 25 °C
BZA856A
BZA862A
BZA868A
BZA820A
Product data sheet
BZA800A-series
MIN. TYP. MAX. UNIT
−
−
1.3
V
−
−
2000 nA
−
−
700
nA
−
−
200
nA
−
−
100
nA
5.32 5.6
5.89 6.2
6.46 6.8
19
20
5.88 V
6.51 V
7.14 V
21
V
−
−
400
Ω
−
−
300
Ω
−
−
200
Ω
−
−
125
Ω
−
−0.2 −
mV/K
−
1.8
−
mV/K
−
3
−
mV/K
−
16
−
mV/K
−
−
240
pF
−
−
200
pF
−
−
180
pF
−
−
50
pF
−
−
3.2
A
−
−
2.9
A
−
−
2.6
A
−
−
0.6
A
2000 Sep 25
4
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