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28C256 查看數據表(PDF) - ON Semiconductor

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28C256
ON-Semiconductor
ON Semiconductor ON-Semiconductor
28C256 Datasheet PDF : 14 Pages
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CAT28C256
Table 4. MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
L
H
DIN
ACTIVE
Standby and Write Inhibit
H
X
X
HighZ
STANDBY
Read and Write Inhibit
X
H
H
HighZ
ACTIVE
Table 5. CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = 5 V)
Symbol
Test
Max
Conditions
Units
CI/O (Note 7)
Input/Output Capacitance
10
VI/O = 0 V
pF
CIN (Note 7)
Input Capacitance
6
VIN = 0 V
pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
Table 6. A.C. CHARACTERISTICS, READ CYCLE (VCC = 5 V ±10%, unless otherwise specified.)
28C25612
28C25615
Symbol
Parameter
Min
Max
Min
Max
Units
tRC
Read Cycle Time
120
150
ns
tCE
CE Access Time
120
150
ns
tAA
Address Access Time
120
150
ns
tOE
OE Access Time
50
70
ns
tLZ (Note 8)
CE Low to Active Output
0
0
ns
tOLZ (Note 8)
OE Low to Active Output
0
0
ns
tHZ (Notes 8, 9)
CE High to HighZ Output
50
50
ns
tOHZ (Notes 8, 9) OE High to HighZ Output
50
50
ns
tOH (Note 8)
Output Hold from Address Change
0
0
ns
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. Output floating (HighZ) is defined as the state when the external data line is no longer driven by the output buffer.
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