CGY21 查看數據表（PDF） - Siemens AG

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CGY21

GaAs MMIC

Siemens AG 

CGY 21

Maximum Ratings

Parameter

Supply voltage, TC ≤ 80 ˚C

Total power dissipation, TC ≤ 50 ˚C

Channel temperature

Storage temperature range

Symbol

VS

Ptot

Tch

Tstg

Values

Unit

6

V

2

W

150

˚C

– 55 … + 150

Thermal Resistance

Channel - case

RthchC

50

K/W

Note: Exceeding any of the maximum ratings may cause permanent damage to the device.

Appropriate handling procedures are required to protect the electrostatic sensitive IC

against degradation due to excess voltage or excess current spikes. Excellent ground

connection of lead 4 and the package (e. g. soldered on microstripline laminate) is

required to achieve guaranteed RF performance and stable operation conditions and

provides adequate heat sink. Low parasitic capacitance of the bias network to port 2

gives optimum gain and flatness. Input and output connections must be DC isolated by

coupling capacitors.

Semiconductor Group

2

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