CGY31 查看數據表（PDF） - Siemens AG

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CGY31

GaAs MMIC

Siemens AG 

Application Circuit

f = 800 MHz to 1800 MHz

CGY 31

Legend of components

C1, C2, C3

: 100 pF

: 1 nF

Chip capacitors

R1

39 Ω

Resistor, e.g. l = 4 mm; ∅1.8 mm with axial leads

L1

70 nH

Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire

wound on R. The geometrical combination of L1 and R

influences the frequency response.

L2

40 nH

Inductance, e.g. 5 turns, 0.25 enamelled copper wire

wound on M3-nylon rod.

D

6V2

Zener diode, 1.3 W (type BZW 22 C 6 V 2).

Note: For lower frequencies (f = 100 … 900 MHz) the performance of CGY 31 is comparable

to that of CGY 21, if an interstage circuit with L1 = 1 µH is connected.

Semiconductor Group

4

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