CGY50 查看數據表（PDF） - Siemens AG
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CGY50 Datasheet PDF : 5 Pages
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GaAs MMIC
CGY 50
________________________________________________________________________________________________________
Electrical characteristics
TA = 25 °C, VG = 0 V, VD = 4.5 V, RS = RL = 50 Ω, unless otherwise specified
( for application circuit see next page )
Characteristics
Drain current
Power gain
f = 200 MHz
f = 1800 MHz
Gain flatness
f = 200 to 1000 MHz
f = 800 to 1800 MHz
Noise figure
f = 200 to 1800 MHz
Input return loss
f = 200 to 1800 MHz
Output return loss
f = 200 to 1800 MHz
Third order intercept point
Two tone intermodulation test
f1 = 806 MHz, f2 = 810 MHz
P
0
=
10
dBm
(
both
carriers
)
1dB gain compression
f = 200 to 1800 MHz
Gain control dynamic range
f = 200 to 1800 MHz
Symbol min
I
-
D
G
-
7.5
∆G
-
-
F
-
RL
IN
9.5
RL
OUT
9.5
IP3
29
typ
60
10.0
8.5
0.4
1.1
3.0
12
12
31
max Unit
75
mA
dB
-
-
dB
-
2
dB
4.0
dB
-
dB
-
dBm
-
P1 dB
dBm
-
16
-
∆G
dB
-
20
-
Siemens Aktiengesellschaft
pg. 2/5
11.01.1996
HL EH PD 21
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