CM1200HC-66H 查看數據表（PDF） - Mitsumi
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CM1200HC-66H Datasheet PDF : 7 Pages
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 125°C
2000
1600
VGE = 20V
VGE = 15V
VGE = 12V
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 20V
2000
1600
1200
800
400
VGE = 10V
VGE = 8V
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
1200
800
400
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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