CM1200HC-66H 查看數據表（PDF） - Mitsumi
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CM1200HC-66H Datasheet PDF : 7 Pages
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 f = 100kHz
3
2
Cies
102
7
5
3
2
Coes
101
7
5
Cres
3
2
10100-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
2.5 Tj = 125°C, Inductive load
Eon
Eoff
2
1.5
1
Erec
0.5
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0
3
6
9
12
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
6
VCC = 1650V, IC = 1200A
VGE = ±15V
5 Tj = 125°C, Inductive load
Eon
4
3
Eoff
2
1
Erec
0
0
5
10
15
20
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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