CR0720SC 查看數據表（PDF） - Unspecified

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CR0720SC

Thyristors (SiBOD Breakover Devices)

Unspecified 

Thyristors (SiBOD™ Breakover Devices)

SiBOD Series

Application Notes

PABX PROTECTION

CR1300SB

CR1300SB

DC SUPPLY

IH >

VC

R

R

VC

Equipment

to be

protected

SLIC PROTECTION

Line

CR0640SB

To SLIC

CR0640SB

Line

Line

or

(-)

(-)

CR0640SB

(+) To SLIC

Line

(-)

COMPLETE PC BOARD

OPERATION PROTECTION

Line

CR2300

SB

On-hook

Off-hook

Ring

relay

CR0640 (-)

SB

(-)

Integrated

SLIC

(+)

On-hook

Line

(-)

Primary Off-hook

protection Ring

on-hook

Generator

or Ring

Detection

Secondary

protection

off-hook

Circuit

-VBattery

The Added Crydom Benefit

Crydom Thyristors (SiBOD™ Breakover

Devices) offer the highest quality and

performance. They also come with an

added benefit – service and technical

assistance to help ensure optimum pro-

tection for your telecommunications

application.

SiBOD Series

The Crydom SiBOD is a four-layer thyristor-

based protector designed specifically for

telecommunications applications. It has

greater capacity for diverting surge cur-

rents than an avalanche TVS device.

The Crydom series protector is based on

the proven technology of the SiBOD prod-

uct. Designed for transient voltage protec-

tion of telecommunications equipment, it

provides higher power handling than a

conventional avalanche diode (TVS), and

when compared to a GDT offers lower volt-

age clamping levels and infinite surge life.

Electrical Characteristics

The electrical characteristics of the

SiBOD devices are similar to those of a

self-gated Triac, but the SiBOD are two-

terminal devices with no gate. The gate

function is achieved by an internal current

controlled mechanism.

Like the TVS diodes, the SiBOD have a

stand-off voltage (VRM) that should be equal

to or greater than the operating voltage of

the system to be protected. At this voltage

(VRM) the current consumption of the SiBOD

are negligible and will not effect the pro-

tected system.

When a transient occurs, the voltage across

the SiBOD will increase until the breakdown

voltage (VBR) is reached. At this point the

device will operate in a similar way to a

TVS device and is in an avalanche mode.

The voltage of the transient will now be

limited and will only increase by a few

volts as the device diverts more current.

As this transient current rises, a level of

current through the device is reached

(IBO), causing the device to switch to a

fully conductive state such that the volt-

age across the device is now only a few

volts (VT). The voltage at which the device

switches from the avalanche mode to the

fully conductive state (VT) is known as the

breakover voltage (VBO). When the device

is in the VT state, high currents can be

diverted without damage to the SiBOD

due to the low voltage across the device,

since the limiting factor in such devices is

dissipated power (V X I).

Resetting of the device to the nonconduct-

ing state is controlled by the current flowing

through the device. When the current falls

below a certain value, known as the holding

current (IH), the device resets automatically.

As with the avalanche TVS device, if the

SiBOD device is subjected to a surge

current that is beyond its maximum rating,

the device will fail in short-circuit mode,

which ensures that the equipment is

ultimately protected.

2

To Order: 1-877-502-5500 Fax: 1-858-715-7280

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