DB3 查看數據表（PDF） - Rugao Dachang Electronics Co., Ltd

零件编号

产品描述 (功能)

生产厂家

DB3

SILICON BIDIRECTIONAL DIAC

Rugao Dachang Electronics Co., Ltd 

SIYU R

双向触发二极管

DO-35 Glass

Unit：mm

极限参数( LIMITING VALUES )

DB3/DB4

SILICON BIDIRECTIONAL DIAC

特征 Features

·反向漏电流低 Low reverse leakage

·正向浪涌承受能力较强 High forward surge capability

·高温焊接保证 High temperature soldering guaranteed:

260℃/10 秒, 0.375" (9.5mm)引线长度。

260℃/10 seconds, 0.375" (9.5mm) lead length,

·引线可承受5 磅 (2.3kg) 拉力。 5 lbs. (2.3kg) tension

·引线和管体皆符合RoHS标准 。

Lead and body according with RoHS standard

机械数据 Mechanical Data

·端子: 镀锡轴向引线 Terminals: Plated axial leads

·安装位置: 任意 Mounting Position: Any

符号

Symbols

Pc

ITRM

参数

Parameters

功耗

Power Dissipation

峰值脉冲电压

Repetitive Peak on-state Current

TA=50℃

tp=10uS

F=100Hz

TSTG

TJ

贮存 温度范围

Storage Temperature

工作结温范围

0 perating Junction Temperature

电特性(ELECTRICAL CHARACTERISTICS)

Value

DB3/DB4

150

2.0

-40 to +125

-40 to +100

单位

Unit

mW

A

℃

℃

符号

Symbols

参数

Parameters

测试条件

Test Conditions

击穿电压

VBO

Breakover Voltage [Note 2 ]

Min

C=22nF [Note 2 ]

Typ

See Diagram 1

Max

击穿电压对称性

I+VBOI- I-VBOI Breakover Voltage Symmetry

C=22nF [Note 2 ]

Max

See Diagram 1

动态回弹电压

I ± △VI

△I=[ IBO to IF=10mA ]

Min

Dynamic Breakover Voltage [Note 1 ]

See Diagram 1

输出电压

Vo

Output Voltage [Note 1 ]

See Diagram 2

Min

IBO

击穿电流

Breakover Current [Note 1 ]

C=22nF [Note 2 ]

Max

tr

上升时间

Rise Time [Note 1 ]

See Diagram 3

Typ

IB

漏电电流

Leakage Current [Note 1 ]

VBBO=0.5V max

See Diagram 1

Max

IP

峰值电流

Peak Current [Note 1 ]

See Diagram 2 (Gate)

Min

Value

单位

DB3 DB4 Unit

28

35

32

40

V

36

45

±3

V

5

V

5

V

100

uA

1.5

uS

10

uA

0.3

A

Notes:1.Electrical characteristics applicable in both forward and reverse directions.

2.Connected in parallel with the devices.

大昌电子 DACHANG ELECTRONICS

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