DB4 查看數據表（PDF） - Daesan Electronics Corp.
零件编号
产品描述 (功能)
生产厂家
DB4 Datasheet PDF : 2 Pages
| |||
DB3 / DB4
SIGNAL BIDIRECTIONAL
DIAC
Features
The three layer, two terminal, axial lead,
hermetically sealed diacs are designed
specifically for triggering thyristors.
They demonstrate low breakover current
at breakover voltage as they withstand
peak pulse current. The breakover
symmetry is within three volts.
These diacs are intended for use in
thyristors phase control, circuits for lamp
dimming, universal motor speed control,
and heat control
DEC's DB3/DB4 are bi-directional trigged
diode designed to operate in conjunction
with Triacs and SCR's
DO-35(GLASS)
R-1
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.102(2.6)
0.091(2.3)
DIA.
0.787(20.0)
MIN.
0.154(3.9)
MAX.
0.126(3.2)
0.106(2.7)
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
0.025(0.65)
0.021(0.55)
DIA.
0.787(20.0)
MIN.
Dimensions in inches and (millimeters)
Absolute Ratings (Limiting Values)
Symbols
Pc
ITRM
TSTG/TJ
Parameters
Power Dissipation on Printed
Circuit(L=10mm)
TA=50℃
Repetitive Peak on-state
Current
tp=10μs
F=100Hz
Storage and Operating Junction Temperature
Value
DB3
DB4
150
2.0
2.0
-40 to +125/-40 to 110
Units
mW
A
℃
Electrical characteristics
Symbols
Parameters
Test Conditions
VBO
Breakover Voltage (Note 2)
|+VBO|-
| - VBO|
|±△V|
Breakover Voltage Symmetry
Dynamic Breakover Voltage (Note 1)
VO
Output Voltage (Note 1)
IBO
Breakover Current (Note 1)
tr
Rise Time (Note 1)
IB
Leakage Current (Note 1)
Min
C=22nF(Note2)
See diagram 1
Typ
Max
C=22nF(Note2)
See diagram 1
Max
△I=(IBO to IF=10mA)
See diagram 1
Min
See diagram 2
Min
C=22nF(Note2)
Max
See diagram 3
Typ
VB=0.5 VBO max
see diagram 1
Max
Notes:
(1) Electrical characteristics applicable in both forward and reverse directions
(2) Connected in parallel with the devices
Value
DB3
DB4
28
35
32
40
36
45
±3
5
5
100
1.5
10
Units
V
V
V
V
μA
μS
μA
Share Link: 