IRF5803D2 查看數據表（PDF） - International Rectifier

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IRF5803D2

FETKY™

MOSFET & Schottky Diode

International Rectifier 

IRF5803D2

100

10

Schottky Diode Characteristics

100

TJ = 150°C

10

125°C

100°C

1

75°C

0.1

50°C

T J = 150°C

T J = 125°C

T J = 25°C

0.01

25°C

0.001

0

5 10 15 20 25 30 35 40

Reverse V oltag e - V R (V )

Fig. 18 - Typical Values of

Reverse Current Vs. Reverse Voltage

1000

T J = 25°C

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

Fo rw ard V o lta g e D ro p - VFM (V )

Fig. 17 - Maximum Forward Voltage Drop

Characteristics

100

0

5 10 15 20 25 30 35 40 45

Reverse V oltage - V R (V )

Fig. 19 - Typical Junction Capacitance

Vs. Reverse Voltage

8

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