DME375A 查看數據表（PDF） - GHz Technology
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DME375A Datasheet PDF : 4 Pages
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R.A.063099
DME375A
375 Watts, 50 Volts, Pulsed
Avionics 1025-1150 MHz
GENERAL DESCRIPTION
The DME375A is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1025-1150 MHz. The device
has gold thin-film metallization for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25!C2
875 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
55 V
4.0 V
30 A
Maximum Temperatures
Storage Temperature
-65 to +200 !C
Operating Junction Temperature +200 !C
ELECTRICAL CHARACTERISTICS @ 25!C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
"c
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025 – 1150 MHz
Vcc = 50 Volts
PW = 10 #sec
DF = 1%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25!C
BVebo
BVces
hFE
$jc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 20 mA
Ic = 25 mA
Vce = 5V, Ic = 300 mA
MIN TYP MAX UNITS
375
W
85
W
6.5
dB
40
%
!:1
4.0
V
55
V
10
0.2 !C/W
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Initial Issue June 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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