ID246PXX 查看數據表（PDF） - Sharp Electronics

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ID246PXX

Flash Memory Card

Sharp Electronics 

SHARP

ID246 SERIES PRODUCT OVERVIEW

6

1

5. Signal Description

Table 2. Signal Description

Function

40425

h-D15

:Ei#,CEz#

>E#

NE#

IDYlBSY#

:DI#, CDz#

VP

(PPI.VPP2

[cc

iND

EG#

ESET

;VDI, BVDz

'Sl#, vs2#

ADDRESS INPUTS:

These are address bus lines which enable direct addressing of memory

on the card. Signal Ao is not used in word access mode.

,,. Pull-down

(250kn @Vcc=Sv)

I

DATA INPUT/OUTPUT

Do through DIG constitute the bi-directional data bus. Drs is the most

significant bit.

CARD ENABLE 1 & 2:

CEI# enables D+D7, CE2# enables Da-DIG.

OUTPUT ENABLE:

Active low signal gating read data from the memory card.

WRITE ENABLE:

Active low signal gating write data to the memory card.

READY/BUSY OUTPUp

Indicates status of internally timed erase or write activities. ID246

series has two types of Ready/Busy output mode; PCMCIA mode and

High-Performance mode.

0

In PCMCIA mode, a high output indicates the memory card is ready

to accept accesses. A low output indicates that a device in the memory

card is busy.

In High-Performance mode, the card outputs low when the card is in

default state. A high output indicates at least one of flash memory

devices in the card comes to be ready to accept accesses.

0 Pull-down Of2

CARD DETECT 1 & 2:

These signalsprovide for card insertion detection. The signalsare

connectedto groundinternallyon the memorycard,andwill beforced

low whenevera cardis placedin the socket.The hostsocketinterface

circuitry shall supply 10K or larger pull-up resistorson thesesignal

pins.

o

t

Low:PuIl-down On

High:Pull-up 1OOkn

WRITE PROTECT:

Write Protect reflects the statusof the Write Protect switch on the

memorycard. WP setto high = write protected.

I

WRITE / ERASE POWER SUPPLY 1 & 2:

I

CARD POWER SUPPLY:

I

GROUND:

I

REGISTER SELECT:

Providesaccessto attributememorywhenREG# is low.

RESET

Active high signalfor placingcard in Power-OnDefault State.

0 Pull-up 1ookQ

I

o VSI#: Pull-down

VS2#: N.C.

I

BATTERY VOLTAGE DETECT 1 & 2:

Thesesignalsarepulledhigh to maintainSRAM cardcompatibility.

VOLTAGE SENSE1 & 2:

Notifiesthe hostsocketof theCIS’sVCC requirements.VS~i#s pulled-

lawn to ground when using the standardCIS, that indicate 3.3V

operatingis available.

RESERVEDFOR FUTURE USE

T1172E.01

CPS0008E40'

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