FCU900N60Z 查看數據表（PDF） - Fairchild Semiconductor
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FCU900N60Z Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 10.0V
10
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
1
0.1
0.2
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.6
1.2
VGS = 10V
0.8
VGS = 20V
0.4
0
*Note: TC = 25oC
3
6
9
12
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
100
Coss
10
*Note:
1. VGS = 0V
Crss
1 2. f = 1MHz
0.5
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
20
*Notes:
10 1. VDS = 20V
2. 250μs Pulse Test
25oC
150oC
-55oC
1
0.1
2
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
150oC
10
25oC
1
0.1
0.4
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 2.3A
0
0
3
6
9
12
15
Qg, Total Gate Charge [nC]
FCU900N60Z Rev. C0
3
www.fairchildsemi.com
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