FCU900N60Z 查看數據表（PDF） - Fairchild Semiconductor
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FCU900N60Z Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 1mA
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
20
10
10μs
1
0.1
0.01
0.1
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
100 200 300 400 500 600
VDS, Drain to Source Voltage [V]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
-80
*Notes:
1. VGS = 10V
2. ID = 2.3A
-40
0
40 80 120 160
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
5
4
VGS = 10V
3
2
1
RθJC = 1.5oC/W
0
25
50
75
100
125
150
TC, Case Temperature [oC]
FCU900N60Z Rev. C0
4
www.fairchildsemi.com
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