FL16KM-6A 查看數據表（PDF） - Renesas Electronics
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FL16KM-6A Datasheet PDF : 5 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
ID = 30A
16
12
TC = 25°C
Pulse Test
8
16A
4
8A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
TC = 25°C
VDS = 50V
Pulse Test
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
3
2
103
Ciss
7
5
3
2
Coss
102
7
5
3 TCh = 25°C
2 f = 1MHZ
101 VGS = 0V
3 5 7 100 2 3
5 7 101 2 3
Crss
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FL16KM-6A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
VGS = 10V
0.3
20V
0.2
0.1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
5
4
3
2
TC = 25°C
75°C
101
125°C
7
5
4
3
2
100
7
5100
2 3 4 5 7 101
VDS = 10V
Pulse Test
2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
td(off)
102
tf
7
5
4
tr
3
2
td(on)
101
TCh = 25°C
7 VDD = 150V
5 VGS = 10V
4
3
RGEN = RGS = 50Ω
100 2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Mar. 2002
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