FMMT591 查看數據表（PDF） - Galaxy Semi-Conductor
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FMMT591 Datasheet PDF : 4 Pages
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Production specification
PNP Silicon Epitaxial Planar Transistor
FMMT591
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-80
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1 μA
VCE=-5V,IC=-1mA
100
DC current gain
VCE=-5V,IC=-500mA
100
hFE
VCE=-5V,IC=-1A
80
VCE=-5V,IC=-2A
15
Collector-emitter saturation voltage VCE(sat)
IC=-500mA, IB=-50mA
IC=-1A, IB= -100mA
300
-0.3
V
-0.6
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
VBE(sat)
IC=-1A, IB= -100mA
VBE
VCE=-5V,IC=-1A
VCE=-10V, IC= -50mA
fT
f=100MHz
150
-1.2 V
-1 V
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
10 pF
C053
Rev.A
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