FTD2011 查看數據表（PDF） - TY Semiconductor

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FTD2011

Dual N-Channel Enhancement Mode MOSFET

TY Semiconductor 

SSMMDDTTyyppee

MOSFEICT

Product specification

FTD2011

■ Features

● RDS(ON)=30mΩ Max. @VGS=4V

● RDS(ON)=45mΩ Max. @VGS=2.5V

D1

S1

S1

G1

TSSOP-8

Unit: mm

1 : Drain1

2 : Source1

3 : Source1

4 : Gate1

5 : Gate2

6 : Source2

D2

7 : Source2

S2

8 : Drain2

S2

G2

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain-Current

-Continuous

-Pulsed

(NOTE 1)

Power Dissipation

(NOTE 2)

Thermal Resistance,Junction- to-Ambient

Operating Junction and Storage Temperature Range

Note: 1. PW≤10μs, duty cycle≤1%

2. Mounted on a ceramic board (1000mm2×0.8mm)

Symbol

VDS

VGS

ID

IDM

PD

RθJA

Tj.Tstg

Rating

20

±10

5

20

1.3

96

-55 to 150

Unit

V

V

A

A

W

℃/W

℃

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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