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FX30SMJ-3 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
FX30SMJ-3
Renesas
Renesas Electronics Renesas
FX30SMJ-3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
FX30SMJ-3
Performance Curves
Power Dissipation Derating Curve
200
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–50
–40 VGS = –10V
Tc = 25°C
–6V Pulse Test
–5V
–4V
–3.5V
–30
–3V
–20
PD = 150W
–10
0
0
–2 –4 –6 –8 –10
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
ID = –45A
–30A
–2
–15A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage VGS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–2
–102
–7
–5
–3
–2
–101
–7
–5
–3
–2
100µs
1ms
DC
–100
–7
–5 Tc = 25°C
–3 Single Pulse
–2
–2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
–20
VGS = –10V
–6V
–4V
–16
–3V
Tc = 25°C
Pulse Test
–12
–8
–2.5V
–4
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
200
Tc = 25°C
Pulse Test
160
120
VGS = –4V
80
–10V
40
0–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102
Drain Current ID (A)

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