FX70KMJ-03-A8 查看數據表（PDF） - Renesas Electronics

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FX70KMJ-03-A8

High-Speed Switching Use Pch Power MOS FET

Renesas Electronics 

FX70KMJ-03

High-Speed Switching Use

Pch Power MOS FET

Features

• Drive voltage : 4 V

• VDSS : –30 V

• rDS(ON) (max) : 12.3 mΩ

• ID : –70 A

• Integrated Fast Recovery Diode (TYP.) : 70 ns

• Viso : 2000 V

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

3

12 3

1

2

REJ03G1455-0200

(Previous: MEJ02G0270-0101)

Rev.2.00

Aug 07, 2006

1. Gate

2. Drain

3. Source

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

Viso

—

Ratings

–30

±20

–70

–280

–70

–70

–280

35

– 55 to +150

– 55 to +150

2000

2.0

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 10 µH

A

A

W

°C

°C

V

AC for 1 minute,

Terminal to case

g

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

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