FZT1147A(1997) 查看數據表（PDF） - Diodes Incorporated.

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FZT1147A
(Rev.:1997)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

FZT1147A

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

VALUE

TYP. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -15

-35

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VCES

-12

-25

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VCEO

-12

-25

V

IC=-10mA *

Collector-Emitter

Breakdown Voltage

VCEV

-12

-25

V

IC=-100µA, VEB=+1V

Emitter-Base Breakdown V(BR)EBO -5

-8.5

Voltage

V

IE=-100µA

Collector Cut-Off Current ICBO

-0.3 -100 nA

VCB=-12V

Emitter Cut-Off Current IEBO

-0.3 -100 nA

VEB=-4V

Collector Emitter Cut-Off ICES

Current

-0.3 -100 nA

VCE=-10V

Collector-Emitter

Saturation Voltage

VCE(sat)

-25

-50

mV

-70

-110 mV

-90

-130 mV

-115 -170 mV

-250 -400 mV

IC=-0.1A, IB=-1.0mA*

IC=-0.5A, IB=-2.5mA*

IC=-1A, IB=-6mA*

IC=-2A, IB=-20mA*

IC=-5A, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-950 -1050 mV

IC=-5A, IB=-50mA*

Base-Emitter Turn-On

Voltage

VBE(on)

-905 -1000 mV

IC=-5A, VCE=-2V*

Static Forward Current hFE

Transfer Ratio

270

450

250

400

850

200

340

150

245

90 145

50

IC=-10mA, VCE=-2V*

IC=-0.5A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-5A, VCE=-2V*

IC=-10A, VCE=-2V*

IC=-20A, VCE=-2V*

Transition Frequency

fT

115

MHz IC=-50mA, VCE=-10V

f=50MHz

Output Capacitance

Ccb

80

pF

VCB=-10V, f=1MHz

Switching Times

ton

150

ns

IC=-4A, IB=-40mA,

VCC=-10V

toff

220

ns

IC=-4A, IB=±40mA,

VCC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

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