FZT1147A(1997) 查看數據表（PDF） - Diodes Incorporated.

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FZT1147A
(Rev.:1997)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

FZT1147A

TYPICAL CHARACTERISTICS

1.0

+25°C

0.8

0.6

IC/IB=10

IC/IB=50

IC/IB=100

IC/IB=200

0.4

0.2

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

VCE(sat) v IC

1.0

IC/IB=100

0.8

0.6

-55°C

+25°C

+100°C

0.4

0.2

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

VCE(sat) v IC

800

600

400

VCE=2V

+100°C

+25°C

-55°C

200

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

hFE v IC

1.8

IC/IB=100

1.5

1.2

0.9

0.6

0.3

0

1m

-55°C

+25°C

+100°C

10m 100m

1

10

100

IC - Collector Current (A)

VBE(sat) v IC

1.5

VCE=2V

1.0

0.5

-55°C

+25°C

+100°C

0

1m

10m 100m

1

10

100

IC - Collector Current (A)

VBE(on) v IC

100

10

DC

1s

1

100ms

10ms

1ms

100us

100m

100m

1

10

100

VCE - Collector Emitter Voltage (V)

Safe Operating Area

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