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GI851 查看數據表(PDF) - General Semiconductor

零件编号
产品描述 (功能)
生产厂家
GI851
GE
General Semiconductor GE
GI851 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES GI850 THRU GI858
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
TL=LEAD TEMPERATURE
L=0.25” (6.3 mm)
6.0
L=
LEAD LENGTH
L=0.375” (9.5mm)
4.0 LEAD LENGTH
0.8 x 0.8 x 0.40”
(20 x 20 x 1mm) COPPER HEATSINKS
TA=AMBIENT TEMPERATURE
2.0 0.375” (9.5mm)
LEAD LENGTH
RESISTIVE OR
INDUCTIVE LOAD
0
30
50
70
90
110 130 150 170
TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
200
100
FIG. 2 - MAXIMUM PEAK FORWARD SURGE CURRENT
NON-REPETITIVE
TJ=25°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TJ=150°C
TJ=25°C
TJ=150°C
REPETITIVE
10
1
10
NUMBER OF CYCLES AT 60 HZ
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=100°C
1
TJ=50°C
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
10
1
10
100
REVERSE VOLTAGE, VOLTS

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