GM71CS17400CLJ-6 查看數據表（PDF） - Hynix Semiconductor
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GM71CS17400CLJ-6 Datasheet PDF : 10 Pages
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GM71C(S)17400C/CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71C(S)17400C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71C(S)17400C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71C(S)17400C/CL
offers Fast Page Mode as a high speed access
mode. Multiplexed address inputs permit the
GM71C(S)17400C/CL to be packaged in a
standard 300 mil 24(26) pin SOJ, and a standard
300 mil 24(26) pin plastic TSOP II. The
package size provides high system bit densities
and is compatible with widely available
automated testing and insertion equipment.
System oriented features include single power
supply 5.0V+/-10% tolerance, direct interfacing
capability with high performance logic families
such as Schottky TTL.
Pin Configuration
24(26) SOJ
Features
* 4,194,304 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5.0V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC tRC tPC
GM71C(S)17400C/CL-5 50 13 90 35
GM71C(S)17400C/CL-6 60 15 110 40
GM71C(S)17400C/CL-7 70 18 130 45
* Low Power
Active : 660/605/550mW (MAX)
Standby : 11mW (CMOS level : MAX)
: 0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L-version)
* Battery backup operation (L-version)
* Test function : 16bit parallel test mode
24(26) TSOP II
VCC 1
I/O1 2
I/O2 3
WE 4
RAS 5
NC 6
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
26 VSS
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
VCC 1
I/O1 2
I/O2 3
WE 4
RAS 5
A11 6
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
26 VSS
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
(Top View)
Rev 0.1 / Apr’01
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