GM72V66841ET-8 查看數據表（PDF） - Hynix Semiconductor

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GM72V66841ET-8

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

Hynix Semiconductor 

Absolute Maximum Ratings

Parameter

Symbol

Voltage on any pin relative to VSS

VT

Supply voltage relative to VSS

VCC

Short circuit output current

IOUT

Power dissipation

PT

Operating temperature

Topr

Storage temperature

Tstg

Notes : 1. Respect to VSS

GM72V66841ET/ELT

Value

-0.5 to Vcc+0.5

(<= 4.6 (max))

-0.5 to +4.6

50

1.0

0 to +70

-55 to +125

Unit

Note

V

1

V

1

mA

W

C

C

Recommended DC Operating Conditions (Ta = 0 to + 70C)

Parameter

Supply voltage

Input high voltage

Input low voltage

Symbol

VCC, VCCQ

VSS, VSSQ

VIH

VIL

Min

Max

Unit

3.0

3.6

V

0

0

V

2.0

Vcc+0.3

V

-0.3

0.8

V

Note

1

1, 2

1,3

Notes : 1. All voltage referred to VSS.

2. VIH (max) = 5.6V for pulse width <= 3ns

3. VIL (min) = -2.0V for pulse width <= 3ns

Rev. 1.1/Apr.01

-3-

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