GM72V66841ET-8 查看數據表（PDF） - Hynix Semiconductor

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GM72V66841ET-8

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

Hynix Semiconductor 

GM72V66841ET/ELT

DC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ= 0 V)

(Continued)

Parameter

Symbol

- 7, - 75, - 8, - 7K, - 7J

Min

Max

Unit Test conditions Notes

Input leakage current ILI

-1

1

uA 0 <=Vin <=VCC

Output leakage current ILO

-1.5

Output high voltage VOH

2.4

1.5

uA 0<=Vout<=VCC

DQ = disable

-

V IOH = -2 mA

Output low voltage VOL

-

0.4

V IOL =2 mA

Notes : 1. ICC depends on output load condition when the device is selected. ICC (max) is specified at the

output open condition.

2. One bank operation.

3. Addresses are changed once per one cycle.

4. Addresses are changed once per two cycles.

5. After Power down mode, CLK operating current.

6. After Power down mode, no CLK operating current.

7. After self refresh mode set, self refresh current.

8. L-Version.

9. Input signals are VI H or VIL fixed.

Capacitance (Ta = 25C, VCC, VCCQ = 3.3 V +/-0.3 V)

Parameter

Input capacitance (CLK)

Input capacitance (Signals)

Output capacitance (DQ)

Symbol

CI1

CI2

CO

Min.

2.5

2.5

4.0

Max.

4

5

6.5

Unit

pF

pF

pF

Notes

1, 3, 4

1, 3, 4

1, 2, 3, 4

Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2. DQM = VIH to disable Dout.

3. This parameter is sampled and not 100% tested.

4. Measured with 1.4 V bias and 200mV swing at the pin under measurement.

Rev. 1.1/Apr.01

-5-

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