GM72V66841ET-8 查看數據表（PDF） - Hynix Semiconductor
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GM72V66841ET-8 Datasheet PDF : 10 Pages
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GM72V66841ET/ELT
AC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ = 0 V)
Parameter
-7
- 75
-8
- 7K
- 7J
Symbol
Unit Notes
Min Max Min Max Min Max Min Max Min Max
System clock (CL=2)
cycle time
(CL=3)
tCK
tCK
10 - 10 - 10 - 10 - 15 -
ns
7 - 7.5 - 8 - 10 - 10 -
1
CLK high pulse width
tCKH 2.5 - 2.5 - 3 - 3 - 3 - ns 1
CLK low pulse width
tCKL 2.5 - 2.5 - 3 - 3 - 3 - ns 1
Access time (CL=2)
tAC
from CLK
(CL=3)
tAC
-6-6-6-6-8
ns 1, 2
- 5.4 - 5.4 - 6 - 6 - 6
Data-out hold time
CLK to Data-out low
impedance
CLK to Data-out
high impedance
( CL = 2,3 )
Data-in setup time
tOH 2.7 - 2.7 - 3 - 3 - 3 - ns 1, 2
tLZ 1.5 - 1.5 - 2 - 2 - 2 - ns 1, 2, 3
tHZ
- 5.4 - 5.4 - 6 - 6 - 6 ns 1, 4
tDS 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Data-in hold time
tDH 0.8 - 0.8 - 1 - 1 - 1 - ns 1
Address setup time
tAS 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Address hold time
tAH 0.8 - 0.8 - 1 - 1 - 1 - ns 1
CKE setup time
CKE setup time for
power down exit
CKE hold time
tCES 1.5 - 1.5 - 2 - 2 - 2 - ns 1, 5
tCESP 1.5 - 1.5 - 2 - 2 - 2 - ns
1
tCEH 0.8 - 0.8 - 1 - 1 - 1 - ns 1
Command (CS, RAS,
CAS, WE, DQM)
setup time
tCS 1.5 - 1.5 - 2 - 2 - 2 - ns 1
Command (CS, RAS,
CAS, WE, DQM)
hold time
tCH 0.8 - 0.8 - 1 - 1 - 1 - ns 1
Ref/Active to Ref/Active
command period
tRC
62 - 65 - 68 - 70 - 70 - ns
1
Active to Precharge
command period
tRAS
42 120000 45 120000 48 120000 50 120000 50 120000 ns
1
Active command to
column command
tRCD 20 - 20 - 20 - 20 - 20 - ns 1
(same bank)
Precharge to active
command period
tRP 20 - 20 - 20 - 20 - 20 - ns 1
Rev. 1.1/Apr.01
-6-
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