GM72V66841ET-8 查看數據表（PDF） - Hynix Semiconductor

零件编号

产品描述 (功能)

生产厂家

GM72V66841ET-8

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

Hynix Semiconductor 

GM72V66841ET/ELT

AC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/-0.3 V, VSS, VSSQ = 0 V)

(Continued)

Parameter

Write recovery or data-in

to precharge lead time

Active (a) to Active (b)

command period

Refresh period

Symbol

tRWL

tRRD

tREF

-7

- 75

-8

- 7K

- 7J

Min Max Min Max Min Max Min Max Min Max

7 - 7.5 - 8 - 10 - 10 -

14 - 15 - 16 - 20 - 20 -

- 64 - 64 - 64 - 64 - 64

Unit

ns

ns

ms

Notes

1

1

Notes : 1. AC measurement assumes tT = 1ns. Reference level for timing of input signals is 1.40V.

If tT is longer than 1ns,transition time compensation should be considered.

2. Access time is measured at 1.40V. Load condition is CL = 50pF without termination.

3. tLZ (min)defines the time at which the outputs achieves the low impedance state.

4. tHZ (max)defines the time at which the outputs achieves the high impedance state.

5. tCES define CKE setup time to CKE rising edge except Power down exit command.

Test Condition

• Input and output-timing reference levels: 1.4V

• Input waveform and output load: See following figures

input 2.4V

0.4 V

tT

I/O

80%

20%

CL

tT

OPEN

Rev. 1.1/Apr.01

-7-

Share Link: