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GM72V66841ET-8 查看數據表(PDF) - Hynix Semiconductor
零件编号
产品描述 (功能)
生产厂家
GM72V66841ET-8
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
Hynix Semiconductor
GM72V66841ET-8 Datasheet PDF : 10 Pages
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GM72V66841ET/ELT
Relationship Between Frequency and Minimum Latency
Parameter
frequency(MHz)
t
CK
(ns)
Burst stop to
output valid
data hold
Burst stop to
output high
impedance
(CL=2)
(CL=3)
(CL=2)
(CL=3)
Burst stop to write data ignore
-7
-75
-8
- 7K - 7J
Symbol
143 100 133 100 125 100 100 100 100 66
Notes
7 10 7.5 10 8 10 10 10 10 15
l
BSR
-1-1 -111-1
l
BSR
2222 222222
l
BSH
-2-2 -222-2
l
BSH
3333 333333
l
BSW
0000 000000
Notes :
1.
l
RCD
to
l
RRD
are recommended value.
Rev. 1.1/Apr.01
-9-
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