HGTD3N60C3A9 查看數據表（PDF） - Harris Semiconductor
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HGTD3N60C3A9 Datasheet PDF : 9 Pages
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HGTD3N60C3, HGTD3N60C3S
Absolute Maximum Ratings TC = 25oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 82Ω.
HGTD3N60C3
HGTD3N60C3S
600
6
3
24
±20
±30
18A at 480V
33
0.27
100
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
BVECS
ICES
VCE(SAT)
VGE(TH)
IC = 3mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
16
30
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
3.0
5.5
6.0
V
IGES
SSOA
VGE = ±25V
TJ = 150oC
RG = 82Ω
VGE = 15V
L = 1mH
-
VCE(PK) = 480V 18
VCE(PK) = 600V
2
-
±250
nA
-
-
A
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-
8.3
-
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
-
10.8 13.5
nC
-
13.8 17.3
nC
-
5
-
ns
-
10
-
ns
-
325
400
ns
-
130
275
ns
-
85
-
µJ
Turn-Off Energy (Note 3)
Thermal Resistance
EOFF
RθJC
-
245
-
µJ
-
-
3.75 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
2
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