G30N60C3D(2001) 查看數據表（PDF） - Fairchild Semiconductor
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G30N60C3D
(Rev.:2001)
(Rev.:2001)
Fairchild Semiconductor
G30N60C3D Datasheet PDF : 8 Pages
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HGTG30N60C3D
Typical Performance Curves (Continued)
70
VGE = 15V
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
100
VGE = 10V
50
40
30
VGE = 15V
20
25
500
VCE = 360V, RG = 25Ω, TJ = 125oC
450
20
400
ISC
350
15
300
250
10
200
tSC
150
5
100
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
400
300
VGE = 15V
VGE = 10V
200
10
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
100
VGE = 15V
100
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
400
300
VGE = 10V
200
VGE = 15V
10
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
100
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG30N60C3D Rev. B
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